Title of article
Interband transition studies of one-side modulation-doped AlxGa1−xAs/InyGa1−yAs/GaAs asymmetric step quantum wells
Author/Authors
Jung، نويسنده , , M and Kim، نويسنده , , T.W and Lee، نويسنده , , D.U and Choo، نويسنده , , D.C and Kim، نويسنده , , H.J and Jeong، نويسنده , , J.H. and Kim، نويسنده , , J.H. and Cho، نويسنده , , J.W and Yoo، نويسنده , , Uzma K.H. and Park، نويسنده , , Y.M. and Kim، نويسنده , , Md. and Kim، نويسنده , , D.L and Seo، نويسنده , , K.Y، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2002
Pages
7
From page
2035
To page
2041
Abstract
The results of S–dH measurements and the observation of quantum Hall plateaus at 1.5 K clearly demonstrated the existence of a 2DEG in modulation-doped AlxGa1−xAs/InyGa1−yAs/GaAs asymmetric step quantum wells. The PL data measured at several temperatures showed that the excitonic transition from the ground electronic subband to the ground heavy-hole band (E0–HH1) shifted to the lower energy side with increasing temperature. The value of the (E0–HH1) excitonic transition obtained from the PL measurements was in reasonable agreement with that determined from self-consistent calculations.
Keywords
D. Optical properties , A. Nanostructures
Journal title
Materials Research Bulletin
Serial Year
2002
Journal title
Materials Research Bulletin
Record number
2095975
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