Title of article :
Silicon dioxide coating of CeO2 nanoparticles by solid state reaction at room temperature
Author/Authors :
Cui، نويسنده , , Hongtao and Hong، نويسنده , , Guangyan and Wu، نويسنده , , Xueyan and Hong، نويسنده , , Yuanjia Wang، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2002
Abstract :
The synthesis of SiO2 coated CeO2 nanoparticles by humid solid state reaction at room temperature is described. Transmission electron microscope results show that CeO2 particles were coated with a layer of SiO2. Binding energy of Ce 3d5/2 was shifted from 883.8 to 882.8 eV after coating in the XPS Ce 3d spectra. This confirms the chemical bond formation between SiO32− and Ce4+. Because the surface photovoltage property of CeO2 nanoparticles that were used as core materials in the experiment approaches to that of CeO2 macroparticles, peak P2 (electron transition from O 2p on surface to Ce 4f) disappeared in the surface photovoltage spectrum of CeO2 nanoparticles. Also, the effect of SiO2 on the electron transition from O 2p to Ce 4f results in the lowering of surface photovoltage response intensity of P1 peak (electron transition from O 2p in bulk to Ce 4f).
Keywords :
A. Composite , A. Interfaces , A. Nanostructrues , C. Photoelectron spectroscopy
Journal title :
Materials Research Bulletin
Journal title :
Materials Research Bulletin