Formation of interface silicides at room temperature in pulsed laser deposited Ti thin films on Si〈1 0 0〉

Interface characterization of pulsed laser deposited (PLD) Ti thin films on Si〈1 0 0〉 substrates using secondary ion mass spectrometry (SIMS), grazing incidence X-ray diffraction (GIXRD) and grazing incidence X-ray reflectivity (GIXRR) reveals the growth of titanium silicides (predominantly C54-TiSi2) layers at room temperature. These silicides nucleate and grow only at higher temperatures if deposited by other physical vapor deposition techniques. The films have been subjected to isothermal and isochronal annealing under vacuum with a view to enhancing interface reaction and interdiffusion. The silicide phase formation at room temperature is due to the energetic Ti species available in PLD plume. The silicides formed in PLD have exhibited high thermal stability.