• Title of article

    Phase transitions in quasi-one-dimensional chalcogenides of BaNbxS3 and BaTaxSe3

  • Author/Authors

    Ohtani، نويسنده , , T and Sawada، نويسنده , , H and Chikamori، نويسنده , , M، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2004
  • Pages
    9
  • From page
    561
  • To page
    569
  • Abstract
    BaNbS3 phase was found to be stable in the composition range between x=0.85 and 0.97 for BaNbxS3. The conduction nature was varied from semiconductive to metallic with increasing Nb content. Semiconductor-to-metal (S–M) transition was observed at ∼170 and ∼250 K in BaNb0.95S3 and BaNb0.97S3, respectively. BaTaSe3 phase was stable in the range between x=0.90 and 0.95 for BaTaxSe3. BaTaxSe3 with x=0.90 and 0.95 showed a semiconductor-to-semiconductor transition at ∼140 K, which is characterized by a large jump of the resistivity from ∼106 to ∼1012 Ω cm. Seebeck measurements showed electron conduction in both BaNbxS3 and BaTaxSe3.
  • Keywords
    D. semiconductivity , A. Chalcogenides , C. X-ray diffraction , D. Electrical properties , D. Phase transitions
  • Journal title
    Materials Research Bulletin
  • Serial Year
    2004
  • Journal title
    Materials Research Bulletin
  • Record number

    2096658