Electrical conductivity and Hall mobility in p-type TlGaSe2 crystals

Systematic dark electrical conductivity and Hall mobility measurements have been carried out in the temperature range of 200–350 K on p-type TlGaSe2 crystals. The analysis of the temperature-dependent electrical conductivity and carrier concentration reveals the extrinsic type of conduction with an acceptor impurity level located at 0.33 eV, and donor and acceptor concentrations of 9.0×1015 and 1.3×1016 cm−3, respectively. A hole and electron effective masses of 0.520m0 and 0.325m0, respectively, with a donor to acceptor compensating ratio of 0.69 are also being identified. The Hall mobility is found to be limited by the hole–phonon short-range interactions scattering with a hole–phonon coupling constant of 0.17.