Title of article
Photoluminescence line-shape analysis in quantum wells embedded in superlattices
Author/Authors
Donchev، نويسنده , , V. and Shtinkov، نويسنده , , N. and Germanova، نويسنده , , K. and Ivanov، نويسنده , , I. and Brachkov، نويسنده , , H. and Ivanov، نويسنده , , Tzv. and Gotszalk، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2001
Pages
3
From page
75
To page
77
Abstract
The temperature evolution of the main photoluminescence (PL) mechanisms, in GaAs quantum wells embedded in short-period AlAs/GaAs superlattices, is investigated. PL spectra are measured from 2 to 300 K. A detailed line-shape analysis of the PL peaks is performed by means of a statistical model, including both free exciton and free carrier recombination. The fits based on this model reproduce satisfactorily the experimental PL line shapes and allow to assess quantitatively the relative contributions of free excitons and free carriers to the radiative recombination at different temperatures. The results indicate the predominant role of free excitons in the radiative recombination up to room temperature, and are consistent with the mass action law.
Keywords
Photoluminescence , Embedded quantum wells , Line-shape analysis , AlAs/GaAs
Journal title
Materials Science and Engineering C
Serial Year
2001
Journal title
Materials Science and Engineering C
Record number
2097283
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