Modelling of porous silicon formation process

There are many applications where porous silicon (PS) has been used with profit. Advances in PS-based technologies depend strongly on possibilities to provide PS layers with specified reproducible parameters. This paper discusses modelling PS layer formation kinetics and porosity distribution through the PS thickness if a local silicon anodisation within mask openings of different geometry is performed. Calculation of the porosity distribution through the PS thickness depending on chemical erosion of PS matrix with the anodising process is shown. Modelling error is shown to be 5–10%. The developed models can be useful in manufacturing PS-based optoelectronic devices such as integrated optical waveguides (WGs).