Author/Authors :
Ray، نويسنده , , S.C. and Okpalugo، نويسنده , , T.I.T. and Pao، نويسنده , , C.W. and Tsai، نويسنده , , H.M. and Chiou، نويسنده , , J.W. and Jan، نويسنده , , J.C. and Pong، نويسنده , , W.F. and Papakonstantinou، نويسنده , , P. and McLaughlin، نويسنده , , J.A. and Wang، نويسنده , , W.J.، نويسنده ,
Abstract :
We have investigated the electronic and bonding structure using Fourier-transform infra-red (FT-IR) spectra and studied photoluminescence (PL) from micro-Raman spectra analysis of a-C:H:Si (Si:DLC) thin films deposited by plasma enhanced chemical vapour deposition (PECVD) method. Tetramethylsilane [Si(CH3)4, TMS] vapour was used as Silicon precursor and a bias voltage of 400 V was applied during deposition. It is observed from FT-IR spectra that with increasing TMS flow rate, the intensity of SiHn and CHn modes is increased significantly. PL study indicates that the PL is increased and that the PL peak position is shifted towards lower energy when the TMS flow rate increases gradually during deposition.
Keywords :
B. Vapour deposition , C. Infrared spectroscopy , D. Luminescence , A. Thin film
