Author/Authors :
Normand، نويسنده , , P. and Kapetanakis، نويسنده , , E. and Tsoukalas، نويسنده , , D. and Kamoulakos، نويسنده , , G. and Beltsios، نويسنده , , K. and Van Den Berg، نويسنده , , J. and Zhang، نويسنده , , S.، نويسنده ,
Abstract :
The electrical characteristics of Si nanocrystal-based MOS memory devices are studied. The nanocrystals are fabricated into 8-nm thin oxide by very low energy Si+ implantation at different doses and subsequent annealing. TEM work suggests that Si nanocrystals develop at a density, size and perfection that vary strongly with the implanted dose and these structural features are found compatible with the device transfer characteristics.
Keywords :
SI , Implantation , nanocrystals , memory
