Title of article
MOS memory devices based on silicon nanocrystal arrays fabricated by very low energy ion implantation
Author/Authors
Normand، نويسنده , , P. and Kapetanakis، نويسنده , , E. and Tsoukalas، نويسنده , , D. and Kamoulakos، نويسنده , , G. and Beltsios، نويسنده , , K. and Van Den Berg، نويسنده , , J. and Zhang، نويسنده , , S.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2001
Pages
3
From page
145
To page
147
Abstract
The electrical characteristics of Si nanocrystal-based MOS memory devices are studied. The nanocrystals are fabricated into 8-nm thin oxide by very low energy Si+ implantation at different doses and subsequent annealing. TEM work suggests that Si nanocrystals develop at a density, size and perfection that vary strongly with the implanted dose and these structural features are found compatible with the device transfer characteristics.
Keywords
SI , Implantation , nanocrystals , memory
Journal title
Materials Science and Engineering C
Serial Year
2001
Journal title
Materials Science and Engineering C
Record number
2097326
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