Title of article :
Electric signal transfer through nm-thick molecular bilayers
Author/Authors :
Chai، نويسنده , , Liraz and Cahen، نويسنده , , David، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2002
Pages :
5
From page :
339
To page :
343
Abstract :
An information transfer mechanism through a molecular bilayer, which does not involve charge/mass transfer or conformational changes of membrane-spanning molecular structures, is proposed. We tested this proposal by measuring changes in the electric potential at a Si/SiOx surface, onto which an artificial bilayer had been constructed, in response to exposure of the adsorbed bilayer to different ambient. The bilayer was comprised of an OctadecylTrichloroSilane (OTS) monolayer, adsorbed onto the Si/SiOx surface and a second layer of stearic acid, deposited on the OTS monolayer by the Langmuir–Blodgett technique. Changes of the band bending (BB) at the Si/SiOx surface in response to exposing the bilayer to different solutions were measured by Kelvin Probe. These changes indicate that external stimuli at the bilayerʹs exterior induce a change in the electric potential at the bilayerʹs interior, a change that is sensed at the surface of the Si/SiOx. The mechanism proposed to explain the results is based on electrostatic interactions at the bilayerʹs exterior with dipole- or monopole-carrying molecules.
Keywords :
Si/SiOx , Band bending , kelvin probe , Bilayer , Information transfer
Journal title :
Materials Science and Engineering C
Serial Year :
2002
Journal title :
Materials Science and Engineering C
Record number :
2097787
Link To Document :
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