Characterization of ultrashort-period GaAs/AlAs superlattices by exciton photoluminescence

Ultrashort-period GaAs/AlAs superlattices of type-II were investigated by low-temperature photoluminescence spectroscopy. The photoluminescence spectra consisting of many lines were carefully analyzed to obtain energy position, full width at half maximum and relative intensity for each individual line. Influence of the energy band structure, layer thickness and interface disorder on the radiative electron-hole transitions in these structures is discussed.