Title of article
Characterization of ultrashort-period GaAs/AlAs superlattices by exciton photoluminescence
Author/Authors
Litovchenko، نويسنده , , V.G and Korbutyak، نويسنده , , D.V. and Krylyuk، نويسنده , , S.G. and Kryuchenko، نويسنده , , Yu.V، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2002
Pages
5
From page
439
To page
443
Abstract
Ultrashort-period GaAs/AlAs superlattices of type-II were investigated by low-temperature photoluminescence spectroscopy. The photoluminescence spectra consisting of many lines were carefully analyzed to obtain energy position, full width at half maximum and relative intensity for each individual line. Influence of the energy band structure, layer thickness and interface disorder on the radiative electron-hole transitions in these structures is discussed.
Keywords
exciton , phonon , GaAs/AlAs superlattice , Indirect transitions
Journal title
Materials Science and Engineering C
Serial Year
2002
Journal title
Materials Science and Engineering C
Record number
2097804
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