Title of article
Optical and electrochemical studies of thiacalix[4]arene film supported on Si/SiO2 for ion-sensitive sensor
Author/Authors
Ali، نويسنده , , M.B and Abdelghani، نويسنده , , A and Ouada، نويسنده , , H.B and Jaffrezic-Renault، نويسنده , , N and Lamartine، نويسنده , , R، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2002
Pages
6
From page
29
To page
34
Abstract
The present work is motivated by the development of ion-sensitive sensors (suited for aqueous medium) based on functional supported thin film as sensitive membrane. Thin thiacalix[4]arene films was deposited using the technique of thermal evaporation under vacuum to fabricate chemical ion-sensitive field effect transistor (ISFET) microsensors. The aim is to characterize thiacalix[4]arene thin film (morphology, chemical composition) and its optical and electrical properties before and after detection of copper(II) ions.
Keywords
ellipsometry , XPS , Sensor , Impedance spectroscopy
Journal title
Materials Science and Engineering C
Serial Year
2002
Journal title
Materials Science and Engineering C
Record number
2097848
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