Title of article :
Electrical field effect on both thermal ionization energy and optical threshold energy of the Cr3+/4+ deep donor level in GaP
Author/Authors :
Ajjel، نويسنده , , R and Za??di، نويسنده , , M.A. and Maaref، نويسنده , , H and Zerra??، نويسنده , , A and Brémond، نويسنده , , G and Ulrici، نويسنده , , W، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2002
Pages :
3
From page :
303
To page :
305
Abstract :
The effect of the electric field on both thermal ionization energy and optical threshold energy have been studied using deep level transient spectroscopy (DLTS) and electrical deep level optical spectroscopy (Electrical DLOS) techniques in Cr-doped GaP. The measurements were focused on the Cr3+/ 4+ donor level. It is found that the ionization energy Ei decreases with the electrical field F as in the case of the Poole–Frenkel model. It is found that there is a variation of the optical threshold with the electrical field.
Keywords :
Electric field , Optical threshold , Thermal ionization energy
Journal title :
Materials Science and Engineering C
Serial Year :
2002
Journal title :
Materials Science and Engineering C
Record number :
2097927
Link To Document :
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