Author/Authors :
Sobolev، نويسنده , , N.A and Ivlev، نويسنده , , G.D and Gatskevich، نويسنده , , E.I and Leitمo، نويسنده , , J.P. and Fonseca، نويسنده , , A and Carmo، نويسنده , , M.C and Lopes، نويسنده , , A.B and Sharaev، نويسنده , , D.N and Kibbel، نويسنده , , H and Presting، نويسنده , , H، نويسنده ,
Abstract :
Si5Ge5 superlattices (SL) were treated by 80-ns pulses of a ruby laser in a wide range of energy densities. The induced structural and electronic changes were monitored in situ by time-resolved reflectivity (TRR) and ex situ by scanning electron microscopy (SEM), Raman scattering and atomic force microscopy (AFM). The SL starts to melt at energy densities typical of bulk Ge (less than 0.4 J/cm2). At ≧0.7 J/cm2, a self-organization phenomenon is observed: a system of quasiregular rectangular grains with linear dimensions of about 100 nm is developed on the sample surface.
Keywords :
Superlattice , Recrystallization , Germanium , Laser annealing , Silicon
