Coupled substitutions in In2O3: New transparent conductors In2−xM2x/3Sbx/3O3 (M = Cu, Zn)

Two solid solutions In2−xM2x/3Sbx/3O3 (M = Cu, Zn) with the bixbyite structure have been synthesized in air at 1300 °C. The homogeneity range is larger for Zn (x = 0.42) than for Cu (x = 0.20) and the cationic distribution of the Cu/Sb and Zn/Sb couples is weakly ordered. These new oxides appear to be transparent conductors. Even fully deprived of tin, they have good potential properties. These oxides are either semiconductors with a small band gap (Cu/Sb) or semimetals (Zn/Sb) with σ = 3 × 102 (Ω cm)−1 at room temperature. These materials are more efficient than bulk ITO prepared under the same experimental conditions, i.e. without reducing treatment (σ = 50 (Ω cm)−1).