Author/Authors :
Notargiacomo، نويسنده , , A. and di Gaspare، نويسنده , , L. and Scappucci، نويسنده , , G. and Mariottini، نويسنده , , G. and Giovine، نويسنده , , Néstor E. and Leoni، نويسنده , , R. and Evangelisti، نويسنده , , F.، نويسنده ,
Abstract :
We report on the electrical transport of wire-based devices fabricated on modulation-doped Si/SiGe two-dimensional electron gas. Two different geometries were investigated: straight and bended wires. In both cases, we found typical features of Coulomb blockade regime. Nevertheless, single electron transistor effects were found only on wires with bends. Reported data suggest that the insertion of bends is a suitable tool for obtaining single electron transistor behavior in Si/SiGe wires.
