Author/Authors :
Ben Zid، نويسنده , , F and Bhouri، نويسنده , , A and Mejri، نويسنده , , H and Said، نويسنده , , M and Bouarissa، نويسنده , , N and Lazzari، نويسنده , , J.-L and Arnaud dʹAvitaya، نويسنده , , F and Derrien، نويسنده , , J، نويسنده ,
Abstract :
We present a numerical simulation of the conduction-band diagram of a resonant tunneling diode in the Si/Si1−xGex system by solving self-consistently Schrödinger and Poisson equations with and without an applied electric field. An analysis of the Stark effect was made in the investigated heterostructure. A particular attention has been paid to the effect of temperature on the electronic behaviour of the modelled heterostructure. We also present calculation of electric field-dependent interband transitions in the Si/Si1−xGex resonant tunneling heterostructure.
