Electronic structure calculations for Si/Si1−xGex multi-quantum well devices

We present a numerical simulation of the conduction-band diagram of a resonant tunneling diode in the Si/Si1−xGex system by solving self-consistently Schrödinger and Poisson equations with and without an applied electric field. An analysis of the Stark effect was made in the investigated heterostructure. A particular attention has been paid to the effect of temperature on the electronic behaviour of the modelled heterostructure. We also present calculation of electric field-dependent interband transitions in the Si/Si1−xGex resonant tunneling heterostructure.