Author/Authors :
Yukhymchuk، نويسنده , , V.O and Yaremko، نويسنده , , A.M and Valakh، نويسنده , , M.Ya and Novikov، نويسنده , , A.V and Mozdor، نويسنده , , E.V and Lytvyn، نويسنده , , P.M and Krasilnik، نويسنده , , Z.F and Kladʹko، نويسنده , , V.P and Dzhagan، نويسنده , , V.M and Mestres، نويسنده , , N and Pascual، نويسنده , , J، نويسنده ,
Abstract :
The influence of geometrical and physical parameters of self-assembled SiGe/Si nanoislands on their energy has been investigated theoretically. The island energy minimum was shown to depend on the growth temperature and Si content in the islands. The results of the theoretical calculations are compared with experimental data obtained by atomic force microscopy and Raman spectroscopy (RS).
Keywords :
GeSi nanoislads , Elastic strain , Raman , AFM , X-Ray
