Title of article
Piezoelectric properties of Bi4Ti3O12 thin films annealed in different atmospheres
Author/Authors
Simُes، نويسنده , , A.Z. and Riccardi، نويسنده , , C.S. and Gonzalez، نويسنده , , A.H.M. and Ries، نويسنده , , A. and Longo، نويسنده , , E. and Varela، نويسنده , , J.A.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2007
Pages
8
From page
967
To page
974
Abstract
Bismuth titanate (Bi4Ti3O12—BIT) films were evaluated for use as lead-free piezoelectric thin-films in micro-electromechanical systems. The films were grown by the polymeric precursor method on Pt/Ti/SiO2/Si (1 0 0) (Pt) bottom electrodes at 700 °C for 2 h in static air and oxygen atmospheres. The domain structure was investigated by piezoresponse force microscopy (PFM). Annealing in static air leads to better ferroelectric properties, higher remanent polarization, lower drive voltages and higher piezoelectric coefficient. On the other hand, oxygen atmosphere favors the imprint phenomenon and reduces the piezoelectric coefficient dramatically. Impedance data, represented by means of Nyquist diagrams, show a dramatic increase in the resistivity for the films annealed in static air atmopshere.
Keywords
A. Ceramics , D. Piezoelectricity , B. Chemical synthesis
Journal title
Materials Research Bulletin
Serial Year
2007
Journal title
Materials Research Bulletin
Record number
2098242
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