Title of article :
Nature of Vn+ ions in SnO2: EPR and photoluminescence studies
Author/Authors :
Ningthoujam، نويسنده , , R.S. and Lahiri، نويسنده , , Debdutta and Sudarsan، نويسنده , , V. and Poswal، نويسنده , , H.K. and Kulshreshtha، نويسنده , , S.K. and Sharma، نويسنده , , Surinder M. and Bhushan، نويسنده , , Brij and Sastry، نويسنده , , M.D.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2007
Abstract :
SnO2 and 5 at.% V doped SnO2 samples were prepared by citrate-gel method. From Raman study on vanadium doped SnO2, the existence of phase separated V2O5 clusters has been established. EPR study on the V doped sample clearly revealed the existence of V4+ ions, which are incorporated in SnO2 lattice and the existence of conduction electrons with g = 1.993. For vanadium doped SnO2 sample, there is a decrease in luminescence at 400 nm and an increase in activation energy of electrical conduction compared to undoped SnO2, and this has been attributed to the decrease in oxygen vacancies brought about by the incorporation of V5+ in the SnO2 lattice.
Keywords :
A. Semiconductors , C. Raman spectroscopy , B. Chemical synthesis , D. Electrical properties , D. Luminescence
Journal title :
Materials Research Bulletin
Journal title :
Materials Research Bulletin