Title of article :
A study on the electrical properties of Pb(Zr, Ti)O3 thin films crystallized by the electrical resistive heating of Pt thin film
Author/Authors :
Song، نويسنده , , Nam-Kyu and Yun، نويسنده , , Jong-In and Joo، نويسنده , , Seung-Ki، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2008
Pages :
5
From page :
292
To page :
296
Abstract :
The electrical properties of Pb(Zr, Ti)O3 thin films annealed by Pt thin film heater were investigated. By the thin film heater, we successfully crystallized Pb(Zr, Ti)O3 thin films at a high temperature above 750 °C in a few seconds. The thin film heater has some advantages, such as a low thermal budget, little Pb-loss and enhanced surface morphology compared with the conventional furnace because it has a fast heating rate. The electrical properties of the Pb(Zr, Ti)O3 thin film crystallized by thin film heater improved considerably comparing to those crystallized in conventional furnace. The remanent polarization, breakdown field, and leakage current density measured to be 22.7 μC/cm2, 853 kV/cm, and 6.93 × 10−7 A/cm2, respectively.
Keywords :
D. Ferroelectricity , A. Thin films , B. Crystal growth , B. Sputtering , D. Electrical properties
Journal title :
Materials Research Bulletin
Serial Year :
2008
Journal title :
Materials Research Bulletin
Record number :
2098626
Link To Document :
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