Title of article
Capacitance–voltage profile characteristics of Schottky barrier structure with InAs quantum dots grown on InAlAs/InP(001)
Author/Authors
Baira، نويسنده , , M. and Ajjel، نويسنده , , R. and Maaref، نويسنده , , H. and Salem، نويسنده , , B. and Bremond، نويسنده , , G. and Gendry، نويسنده , , M. and Marty، نويسنده , , O.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2006
Pages
3
From page
583
To page
585
Abstract
Capacitance–voltage, C(V) studies have been carried out on Schottky barrier structure containing a sheet of self-organized InAs quantum dots (QDs) grown on InAlAs lattice matched to InP in order to deduce the electrical properties of the QDs. Three electron levels have been detected in n-type material, and were attributed to the s ground, the p excited, and the d excited states. Some parameters of the structure, such as the position of the InAs QD plane, the electron concentration in the QDs and an approximate QD height were deduced from the C(V) profile analysis. These results are in good agreement with the transmission electron microscopy (TEM) study realized on the structure.
Keywords
InAs/InAlAs/InP structure , Quantum dots , Capacitance–voltage profile
Journal title
Materials Science and Engineering C
Serial Year
2006
Journal title
Materials Science and Engineering C
Record number
2098803
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