Ultraviolet photodetector based on single GaN nanorod p–n junctions

The fabrication and characterization of ultraviolet photodetectors based on single GaN nanorod p–n junctions are reported. Single nanorod p–n junctions within individual GaN nanorods were grown by using the plasma-assisted molecular beam epitaxy. In order to form the p–n junction at the middle of the nanorod, the dopant was changed from Si (n-type) to Mg (p-type) during the growth procedure. These single GaN nanorod p–n junction diodes have exhibited a rectifying behavior and a photocurrent effect under ultraviolet illumination.