• Title of article

    Characterization of Mo–Al–N nanocrystalline films synthesized by reactive magnetron sputtering

  • Author/Authors

    Yang، نويسنده , , J.F. and Yuan، نويسنده , , Z.G. and Liu، نويسنده , , Q. and Wang، نويسنده , , X.P. and Fang، نويسنده , , Q.F.، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2009
  • Pages
    5
  • From page
    86
  • To page
    90
  • Abstract
    Mo–Al–N films were deposited by a dc reactive magnetron sputtering technique. The effects of N2 partial pressure, substrate temperature, and aluminum content on the phase composition, microstructure, hardness and oxidation resistance of the films were studied. The MoAlN films as prepared are fcc Mo2N structure where partial Mo sites were substituted by Al, and the grain size of the crystallites increased from 8 to 30 nm when the Al concentration was increased from 6% to 33%. In the Mo0.94Al0.06N film, the hardness can reach 29 GPa, which is much higher than that in binary Mo–N systems. The oxidation resistance temperature of Mo–Al–N film with an Al content of 6% was higher than that of Mo–N films, and with further addition of Al content, the oxidation resistance temperature increased slightly.
  • Keywords
    A. Nitrides , C. Electron microscopy , B. Sputtering , D. Mechanical properties
  • Journal title
    Materials Research Bulletin
  • Serial Year
    2009
  • Journal title
    Materials Research Bulletin
  • Record number

    2099236