Title of article
InAs0.45P0.55/InP strained multiple quantum wells intermixed by inductively coupled plasma etching
Author/Authors
Cao، نويسنده , , Meng and Wu، نويسنده , , Hui-Zhen and Lao، نويسنده , , Yan-Feng and Cao، نويسنده , , Chunfang and Liu، نويسنده , , Cheng، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2009
Pages
5
From page
2217
To page
2221
Abstract
The intermixing effect on InAs0.45P0.55/InP strained multiple quantum wells (SMQWs) by inductively coupled plasma (ICP) etching and rapid thermal annealing (RTA) is investigated. Experiments show that the process of ICP etching followed RTA induces the blue shift of low temperature photoluminescence (PL) peaks of QWs. With increasing etching depth, the PL intensities are firstly enhanced and then diminished. This phenomenon is attributed to the variation of surface roughness and microstructure transformation inside the QW structure during ICP processing.
Keywords
C. X-ray diffraction , A. Nanostructures , C. Atomic force microscopy , D. Optical properties , D. Luminescence
Journal title
Materials Research Bulletin
Serial Year
2009
Journal title
Materials Research Bulletin
Record number
2099849
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