Title of article
New red phosphor for near-ultraviolet light-emitting diodes with high color-purity
Author/Authors
Wang، نويسنده , , Zhengliang and He، نويسنده , , Pei and Wang، نويسنده , , Rui and Zhao، نويسنده , , Jishou and Gong، نويسنده , , Menglian، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2010
Pages
3
From page
240
To page
242
Abstract
New red phosphors, Na5Eu(MoO4)4 doped with boron oxide were prepared by the solid-state reaction. Their structure and photo-luminescent properties were investigated. With the introduction of boron oxide, the red emission intensity of the phosphors under 395 nm excitation is strengthened, with high color-purity (x = 0.673, y = 0.327). The single red light-emitting diode was obtained by combining InGaN chip with the red phosphor, bright red light can be observed by naked eyes from the red light-emitting diodes under a forward bias of 20 mA.
Keywords
A. Inorganic compounds , C. X-ray diffraction , D. Luminescence , D. Optical properties
Journal title
Materials Research Bulletin
Serial Year
2010
Journal title
Materials Research Bulletin
Record number
2099950
Link To Document