Efficient 1.53 μm emission and energy transfer in Si/Er–Si–O multilayer structure

Strong 1.53 μm light emission has been achieved in Si/Er–Si–O multilayer structure grown by sputtering method and annealing process. The luminescence intensity at 1.53 μm increases with annealing temperature, reaching maximum at about 800 °C, and decreases at higher temperatures. It is found that the amorphous Si well layer can sensitize and enhance Er3+ luminescence in Er–Si–O sublayer through carrier-mediated processes. Moreover, the Si/Er–Si–O multilayer exhibits much low temperature- and carrier-induced quenching of Er3+ luminescence, with the photoluminescence intensity at 1.53 μm decreased about a factor of only 1.4 from 80 K to 300 K. The new Si nanostructure material reported here may open the route towards the realization of electrically pumped Si-based light source.