Title of article
Single crystal growth and structure refinements of CsMxTe2−xO6 (M = Al, Ga, Ge, In) pyrochlores
Author/Authors
Theeranun Siritanon، نويسنده , , Theeranun and Sleight، نويسنده , , A.W. and Subramanian، نويسنده , , M.A.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2011
Pages
3
From page
820
To page
822
Abstract
Single crystals of CsMxTe2−xO6 pyrochlores with M = Al, Ga, Ge, and In have been grown from a TeO2 flux. Structure refinements from single crystal X-ray diffraction data are reported. These results are used to discuss deviations from ideal stoichiometry that result in electronic conductivity presumably related to mixed valency of tellurium.
Keywords
C. X-ray diffraction , B. Crystal growth , D. Crystal structure , A. Oxides
Journal title
Materials Research Bulletin
Serial Year
2011
Journal title
Materials Research Bulletin
Record number
2100845
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