Title of article
Ultrafast carrier dynamics of near-band-edge emission in single-crystal ZnO nanorods
Author/Authors
Wang، نويسنده , , Dandan and Xing، نويسنده , , Guozhong and Wang، نويسنده , , Xinying and Yin، نويسنده , , Dongmei and Zhou، نويسنده , , Mi and Guo، نويسنده , , Qing and Yang، نويسنده , , Jinghai and Yang، نويسنده , , Lili and Cao، نويسنده , , Jian and Yan، نويسنده , , Yongsheng، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2011
Pages
4
From page
937
To page
940
Abstract
We report on rational synthesis and optical characteristics of highly crystallined ZnO nanorods which were grown by a facile chemical vapor transport method. Temperature-dependent photoluminescence spectra of as-fabricated ZnO nanorods are dominated by near-band-edge emission with a characteristic fine structure due to high crystallinity. Furthermore, the recombination emission involving carrier dynamics of near-band-edge emission in ZnO nanorods was systematically investigated by temperature-dependent time-resolved photoluminescence spectroscopy. Recombination peaks pertaining to the exciton emissions are monitored and resolved in both temporal and spatial regimes.
Keywords
A. Semiconductors , B. vapor deposition , D. Optical properties
Journal title
Materials Research Bulletin
Serial Year
2011
Journal title
Materials Research Bulletin
Record number
2100885
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