Epitaxial growth of SnO2 films on 6H-SiC (0 0 0 1) by MOCVD

SnO2 films have been deposited on 6H-SiC (0 0 0 1) substrates by metalorganic chemical vapor deposition in the temperature range 500–750 °C. X-ray diffraction analysis showed that all the films were highly (1 0 0) oriented with the tetragonal rutile structure. Based on the structure analysis, we propose a growth model that SnO2 films consist of three variant structures with equivalent in-plane orientations. The in-plane orientation relationship between SnO2 and 6H-SiC was determined to be SnO2 [0 1 0]//SiC < 1   0   1 ¯   0 > and SnO2 [0 0 1]//SiC < 1   2 ¯   1   0 > . As the substrate temperature increased from 500 to 750 °C, the carrier concentration decreased from 1.1 × 1020 to 1.6 × 1018 cm−3 while the resistivity increased from 0.01 to 0.57 Ω cm.