Title of article :
Microstructural, electrical and optical properties of indium tin oxide (ITO) nanoparticles synthesized by co-precipitation method
Author/Authors :
Senthilkumar، نويسنده , , V. and Senthil، نويسنده , , Karuppanan and Vickraman، نويسنده , , P.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2012
Pages :
6
From page :
1051
To page :
1056
Abstract :
In the present study, the synthesis of Tin doped indium oxide (ITO) nanopowder at different compositions (In/Sn = 0, 5, 10, 15 at %) was carried out by co-precipitation method. The decomposition of precipitated indium tin acetylacetonate precursor to form In2O3–SnO2 (Sn1−xInxO2) at 400 °C was confirmed by the thermal and FTIR studies. The changes in strain and grain size of the synthesized particle with respect to dopant concentration were determined from the X-ray diffraction (XRD) analysis. Transmission electron microscopy (TEM) images support to confirm the grain size. The optical properties on ITO nanoparticles were analyzed with UV–visible spectroscopy, and band gap was found to vary from 3.62 to 3.89 eV with Sn dopant concentration. This variation was ascribed to the quantum confinement effect.
Keywords :
A. Semiconductors , B. Chemical synthesis , D. Electrical properties , D. Optical properties , C. X-ray diffraction
Journal title :
Materials Research Bulletin
Serial Year :
2012
Journal title :
Materials Research Bulletin
Record number :
2101798
Link To Document :
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