Title of article :
Enhancement of photoluminescence in ZnS/ZnO quantum dots interfacial heterostructures
Author/Authors :
Rajalakshmi، نويسنده , , M. and Sohila، نويسنده , , S. and Ramesh، نويسنده , , R. and Bhalerao، نويسنده , , G.M.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2012
Abstract :
ZnS/ZnO quantum dots (QDs) were synthesized by controlled oxidation of ZnS nanoparticles. HRTEM image showed small nanocrystals of size 4 nm and the magnified image of single quantum dot shows interfacial heterostructure formation. The optical absorption spectrum shows a blue shift of 0.19 and 0.23 eV for ZnO and ZnS QDs, respectively. This is due to the confinement of charge carries within the nanostructures. Enormous enhancement in UV emission (10 times) is reported which is attributed to interfacial heterostructure formation. Raman spectrum shows phonons of wurtzite ZnS and ZnO. Phonon confinement effect is seen in the Raman spectrum wherein LO phonon peaks of ZnS and ZnO are shifted towards lower wavenumber side and are broadened.
Keywords :
A. Nanostructures , B. Chemical synthesis , D. Luminescence , A. Semiconductor , C. Raman spectroscopy
Journal title :
Materials Research Bulletin
Journal title :
Materials Research Bulletin