Author/Authors :
Chen، نويسنده , , Mingming and Zhang، نويسنده , , Quanlin and Su، نويسنده , , Longxing and Su، نويسنده , , Yuquan and Cao، نويسنده , , Jiashi and Zhu، نويسنده , , Yuan and Wu، نويسنده , , Tianzhun and Gui، نويسنده , , Xuchun and Yang، نويسنده , , Chunlei and Xiang، نويسنده , , Rong and Tang، نويسنده , , Zikang، نويسنده ,
Abstract :
High quality ZnO epilayer with background electron concentration as low as 2.6 × 1014 cm−3 was obtained by plasma-assisted MBE on c-sapphire using a thin Mg film as the buffer layer. High-resolution XRD measurement shows a sharp (0 0 2) peak with full width at half maximum (FWHM) of only 0.029°. Photoluminescence spectroscopy presents a weak defect-related near-edge emission. A metal–semiconductor–metal (MSM) typed photodetector based on the material demonstrates a response of ∼43 A/W under the bias of 1 V and an ON/OFF ratio of 104. This un-doped ZnO with ultra-low background electron concentration could be a promising starting material for p-type doping.
Keywords :
E. Electrical properties , A. Oxides , B. Epitaxial growth , C. X-ray diffraction , D. Defects
