Title of article
Growth and characterization of periodically polarity-inverted ZnO structures on sapphire substrates
Author/Authors
Park، نويسنده , , Jinsub and Yao، نويسنده , , Takafumi، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2012
Pages
4
From page
2875
To page
2878
Abstract
We report on the fabrication and characterization of periodically polarity inverted (PPI) ZnO heterostructures on (0 0 0 1) Al2O3 substrates. For the periodically inverted array of ZnO polarity, CrN and Cr2O3 polarity selection buffer layers are used for the Zn- and O-polar ZnO films, respectively. The change of polarity and period in fabricated ZnO structures is evaluated by diffraction patterns and polarity sensitive piezo-response microscopy. Finally, PPI ZnO structures with subnanometer scale period are demonstrated by using holographic lithography and regrowth techniques.
Keywords
A. Semiconductor , A. Thin films , B. Epitaxial growth , C. Atomic force microscopy
Journal title
Materials Research Bulletin
Serial Year
2012
Journal title
Materials Research Bulletin
Record number
2102409
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