A comparison of Ga:ZnO and Ga:ZnO/Ag/Ga:ZnO source/drain electrodes for In–Ga–Zn–O thin film transistors

We compared the characteristics of single Ga:ZnO (GZO) and GZO/Ag/GZO multilayer electrodes for source/drain (S/D) contacts in amorphous In–Ga–Zn–O (a-IGZO)-based thin film transistors (TFTs). Due to the existence of a Ag metallic layer between the GZO layers, the GZO/Ag/GZO multilayer electrode exhibited low sheet resistance (3.95 ohm/sq.) and resistivity (3.32 × 10−5 ohm-cm). The saturation mobility (10.2 cm2 V−1 s−1) of the a-IGZO TFT with GZO/Ag/GZO S/D electrodes is much higher than that attained for the a-IGZO TFT with single GZO S/D electrodes (0.7 cm2 V−1 s−1) due to the lower resistivity of the GZO/Ag/GZO multilayer S/D electrode. Furthermore, it is expected that the high transparency of the GZO/Ag/GZO multilayer will allow for the possible realization of fully transparent a-IGZO TFTs.