Author/Authors :
Sidletskiy، نويسنده , , Oleg and Kononets، نويسنده , , Valerii and Lebbou، نويسنده , , Kheirreddine and Neicheva، نويسنده , , Svetlana and Voloshina، نويسنده , , Olesya and Bondar، نويسنده , , Valerii and Baumer، نويسنده , , Vyacheslav and Belikov، نويسنده , , Konstantin and Gektin، نويسنده , , Alexander and Grinyov، نويسنده , , Boris and Joubert، نويسنده , , Marie-France، نويسنده ,
Abstract :
Structure and scintillation yield of Y3(Al1−xGax)5O12:Ce solid solution crystals are studied. Crystals are grown from melt by the Czochralski method. Distribution of host cations in crystal lattice is determined. Quantity of antisite defects in crystals is evaluated using XRD and atomic emission spectroscopy data. Trend of light output at Al/Ga substitution in Y3(Al1−xGax)5O12:Ce is determined for the first time. Light output in mixed crystals reaches 130% comparative to Ce-doped yttrium–aluminum garnet. Luminescence properties at Al/Ga substitution are evaluated.
Keywords :
A. Oxides , B. Crystal growth , D. Luminescence , C. X-ray diffraction
