Title of article :
Models for mean bonding length, melting point and lattice thermal expansion of nanoparticle materials
Author/Authors :
Omar، نويسنده , , M.S.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2012
Pages :
5
From page :
3518
To page :
3522
Abstract :
A model, based on the ratio number of surface atoms to that of its internal, is derived to calculate the size dependence of lattice volume of nanoscaled materials. The model is applied to Si, Sn and Au nanoparticles. For Si, that the lattice volume is increases from 20 Å3 for bulk to 57 Å3 for a 2 nm size nanocrystals. A model, for calculating melting point of nanoscaled materials, is modified by considering the effect of lattice volume. A good approach of calculating size-dependent melting point begins from the bulk state down to about 2 nm diameter nanoparticle. Both values of lattice volume and melting point obtained for nanosized materials are used to calculate lattice thermal expansion by using a formula applicable for tetrahedral semiconductors. Results for Si, change from 3.7 × 10−6 K−1 for a bulk crystal down to a minimum value of 0.1 × 10−6 K−1 for a 6 nm diameter nanoparticle.
Keywords :
D. Thermal expansion , semiconductors , A. elements , surfaces , Nanostructures
Journal title :
Materials Research Bulletin
Serial Year :
2012
Journal title :
Materials Research Bulletin
Record number :
2102631
Link To Document :
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