Title of article :
Evolution of the structure and properties of solution-based Ge23Sb7S70 thin films during heat treatment
Author/Authors :
Novak، نويسنده , , Jacklyn and Novak، نويسنده , , Spencer and Dussauze، نويسنده , , Marc and Fargin، نويسنده , , Evelyne and Adamietz، نويسنده , , Frédéric and Musgraves، نويسنده , , J. David and Richardson، نويسنده , , Kathleen، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2013
Pages :
6
From page :
1250
To page :
1255
Abstract :
Optical devices such as waveguides and resonators have typically been produced through standard vacuum deposition and photolithography techniques. Solution-derived chalcogenide films are presented as an alternative for devices not easily fabricated through these standard techniques; however, many details of the chemical processes involved in film deposition are still unknown. We present a detailed analysis of the formation of Ge23Sb7S70 films from solution: solvent removal was studied using in situ FTIR and UV–visible absorption spectroscopies during heat treatments at various temperatures, and the glass structure and glass–solvent interactions were studied through analysis of the far- and mid-IR regions, respectively. Correlations have been established between atomic-level structural aspects and macroscopic physical properties such as refractive index, band gap energies, and surface roughness.
Keywords :
A. Chalcogenides , B. Chemical synthesis , C. Atomic force microscopy , C. Infrared spectroscopy , A. amorphous material
Journal title :
Materials Research Bulletin
Serial Year :
2013
Journal title :
Materials Research Bulletin
Record number :
2103346
Link To Document :
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