Photoluminescence properties of AlN-doped BaMgAl10O17:Eu2+ phosphors

The AlN-doped BaMgAl10O17:Eu2+ phosphors were synthesized by conventional solid-state reaction. Powder X-ray diffraction (XRD), scanning electron microscope (SEM) and photoluminescence spectrum (PL) were used for characterization. The growth mechanism was carried out by computer simulation with CASTEP application, and revealed that an ideal hexagonal shape, particle size in 5 μm and 2.5–3 μm in thickness, could be obtained by AlN doping. Additionally, due to the low electronegativity of N3−, the AlN-doped sample showed 35% increase in PL intensity and improvement of thermal stability. These fine particle size and better photoluminescence properties are expected to be applicable to industrial production of BaMgAl10O17:Eu2+ phosphors.