Title of article
Characteristics of ITO films with oxygen plasma treatment for thin film solar cell applications
Author/Authors
Park، نويسنده , , Yong Seob and Kim، نويسنده , , Eungkwon and Hong، نويسنده , , Byungyou and Lee، نويسنده , , Jaehyoeng، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2013
Pages
6
From page
5115
To page
5120
Abstract
The influence of oxygen plasma treatment on the electro-optical and structural properties of indium-tin-oxide films deposited by radio frequency magnetron sputtering method were investigated. The films were exposed at different O2 plasma powers and for various durations by using the plasma enhanced chemical vapor deposition (PECVD) system. The resistivity of the ITO films was almost constant, regardless of the plasma treatment conditions. Although the optical transmittance of ITO films was little changed by the plasma power, the prolonged treatment slightly increased the transmittance. The work function of ITO film was changed from 4.67 eV to 5.66 eV at the plasma treatment conditions of 300 W and 60 min.
Keywords
solar cell , O2 plasma treatment , Work function , Magnetron sputtering , Indium-tin-oxide (ITO)
Journal title
Materials Research Bulletin
Serial Year
2013
Journal title
Materials Research Bulletin
Record number
2104561
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