Title of article :
Band alignment of ultra-thin hetero-structure ZnO/TiO2 junction
Author/Authors :
Shen، نويسنده , , Kai and Wu، نويسنده , , Kunjie and Wang، نويسنده , , Deliang، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2014
Pages :
4
From page :
141
To page :
144
Abstract :
The band alignment at the ZnO/TiO2 hetero-structure interface was measured by high resolution X-ray photoelectron spectroscopy. The valence band offset ( E ZnO − E TiO 2 ) Valence was linearly changed from 0.27 to 0.01 eV at the interface with increased ZnO coating thickness from 0.7 to 7 nm. The interface dipole presented at the ZnO/TiO2 interface was responsible for the decreased band offset. The band alignment of the ZnO/TiO2 heterojunction is a type II alignment.
Keywords :
A. Oxides , B. Sputtering , C. Photoelectron spectroscopy , A. Interfaces
Journal title :
Materials Research Bulletin
Serial Year :
2014
Journal title :
Materials Research Bulletin
Record number :
2104971
Link To Document :
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