• Title of article

    Band alignment of ultra-thin hetero-structure ZnO/TiO2 junction

  • Author/Authors

    Shen، نويسنده , , Kai and Wu، نويسنده , , Kunjie and Wang، نويسنده , , Deliang، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2014
  • Pages
    4
  • From page
    141
  • To page
    144
  • Abstract
    The band alignment at the ZnO/TiO2 hetero-structure interface was measured by high resolution X-ray photoelectron spectroscopy. The valence band offset ( E ZnO − E TiO 2 ) Valence was linearly changed from 0.27 to 0.01 eV at the interface with increased ZnO coating thickness from 0.7 to 7 nm. The interface dipole presented at the ZnO/TiO2 interface was responsible for the decreased band offset. The band alignment of the ZnO/TiO2 heterojunction is a type II alignment.
  • Keywords
    A. Oxides , B. Sputtering , C. Photoelectron spectroscopy , A. Interfaces
  • Journal title
    Materials Research Bulletin
  • Serial Year
    2014
  • Journal title
    Materials Research Bulletin
  • Record number

    2104971