Energy dependence on formation of TiO2 nanofilms by Ti ion implantation and annealing

TiO2 nanofilms were fabricated by a solid-phase-growth progress. The silica glass slides were implanted with Ti ions to the fluence of 1.84 × 1017 ions/cm2 at accelerate voltages of 20, 50, and 80 kV, respectively. The samples were annealed in oxygen atmosphere at 700, 800, 900, and 1000 °C for 4 h, respectively. The influence of the ion energy and the annealing temperature on the formation and phase transformation of the TiO2 films was studied. It was found that anatase TiO2 nanofilms instead of embedded rutile TiO2 nanoparticles on the substrate surfaces when the energy of implanted Ti atoms was 20 kV.