Title of article :
LGSO:Ce scintillation crystal optimization by thermal treatment
Author/Authors :
Kurtsev، نويسنده , , D. and Sidletskiy، نويسنده , , O. and Neicheva، نويسنده , , S. and Bondar، نويسنده , , V. and Zelenskaya، نويسنده , , O. B. Tarasov ، نويسنده , , V. and Biatov، نويسنده , , M. and Gektin، نويسنده , , A.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2014
Abstract :
Impact of post-growth thermal treatment parameters (temperature, duration, atmosphere composition) on optical, luminescent, and scintillation characteristics of Lu2xGd2−2xSiO5:Ce LGSO:Ce has been analyzed. Absorption, X-ray luminescence spectra, thermostimulated luminescence curves, as well as light yield and energy resolution, have been measured before and after thermal treatment in different regimes. Scintillator optimization by thermal treatment allows to improve the energy resolution up to 6.7% at 662 keV.
Keywords :
D. Defects , B. Crystal growth , D. Luminescence , A. Oxides
Journal title :
Materials Research Bulletin
Journal title :
Materials Research Bulletin
