Author/Authors :
Wan ، نويسنده , , Zhixin and Kwack، نويسنده , , Won-Sub and Lee، نويسنده , , Woo-Jae and Jang، نويسنده , , Seung-II and Kim، نويسنده , , Hye Ri and Kim، نويسنده , , Jin-Woong and Jung، نويسنده , , Kang-Won and Min، نويسنده , , Won-Ja and Yu، نويسنده , , Kyu-Sang and Park، نويسنده , , Sung-Hun and Yun، نويسنده , , Eun-Young and Kim، نويسنده , , Jin-Hyock and Kwon، نويسنده , , Se-Hun، نويسنده ,
Abstract :
Titanium doped zinc oxide (Ti doped ZnO) films were prepared by atomic layer deposition methods at a deposition temperature of 200 °C. The Ti content in Ti doped ZnO films was varied from 5.08 at.% to 15.02 at.%. X-ray diffraction results indicated that the crystallinity of the Ti doped ZnO films had degraded with increasing Ti content. Transmission electron microscopy was used to investigate the microstructural evolution of the Ti doped ZnO films, showing that both the grain size and crystallinity reduced with increasing Ti content. The electrical resistivity of the Ti doped ZnO films showed a minimum value of 1.6 × 10−3 Ω cm with the Ti content of 6.20 at.%. Furthermore, the Ti doped ZnO films exhibited excellent transmittance.
Keywords :
A. Thin films , B. vapor deposition , D. Electrical properties , C. Ionic conductivity
