Author/Authors :
-، - نويسنده Department of Chemistry, University of Isfahan, P.O. Box 81746-73441, Isfahan, I. R. IRAN Khosravi Darani, Koroush , -، - نويسنده Department of Chemistry, University of Isfahan, P.O. Box 81746-73441, Isfahan, I. R. IRAN Sabzyan, Hassan , -، - نويسنده Department of Chemistry, University of Isfahan, P.O. Box 81746-73441, Isfahan, I. R. IRAN Zeini-Isfahani, Asghar , -، - نويسنده Department of Chemistry, Sharif University of Technology, P.O. Box 11365-9516, Tehran, I. R. IRAN Parsafar, Gholamabbas
Abstract :
In this work, a more accurate prediction of liquid evaporation flux has been achieved. The statistical rate theory approach, which is recently introduced by Ward and Fang and exact estimation of vapor pressure in the layer adjacent to the liquid–vapor interface have been used for prediction of this flux. Firstly, the existence of an equilibrium layer adjacent to the liquid-vapor interface is considered and the vapor pressure in this layer and its thickness calculated. Subsequently, by using the Fick’s second law, an appropriate vapor pressure expression for the pressure of equilibrium layer is derived and by this expression and the statistical rate theory approach, evaporation flux is predicted more accurately than the previous work. Finally, some novel steady state evaporations are simulated and the effects of both liquid and vapor temperature and the effect of the length of the evaporation chamber on the evaporation flux are investigated.
