Title of article :
Determination of the GaN/A1N band discontinuities via the (−0) acceptor level of iron
Author/Authors :
Baur، نويسنده , , J. and Kunzer، نويسنده , , M. and Maier، نويسنده , , K. and Kaufmann، نويسنده , , U. and Schneider، نويسنده , , J.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 1995
Abstract :
The 1.3 eV iron related emission bands in GaN and A1N were analysed by photoluminescence and photoluminescence excitation spectroscopy. The (−0) acceptor levels of iron in GaN and A1N were determined. A value of 0.5 eV for the GaN/A1N valence band discontinuity is deduced. Values for the GaAs/GaN and the GaAs/A1N valence band discontinuities are discussed.
Keywords :
IR spectroscopy , Heterostructures , nitrides , Semiconductors
Journal title :
MATERIALS SCIENCE & ENGINEERING: B
Journal title :
MATERIALS SCIENCE & ENGINEERING: B
