Defect production and annealing in ion implanted silicon carbide

In the present study we investigated damage production and annealing in 6H SiC wafers implanted with 230 keV Ga+ ions in a wide dose range at various temperatures. Analysis of the implanted layers was performed by the Rutherford backscattering (RBS) channeling technique and by transmission electron microscopy. From the RBS spectra the depth distributions of the defect density npd(z) were calculated and are compared with profiles of the nuclear deposited energy density obtained by TRIM87. The results show a rapid accumulation of damage up to amorphization with increasing ion fluence for implantation temperatures below 573 K. At temperatures higher than 700 K amorphization obviously is avoided. The structure of layers implanted with higher ion fluences at temperatures above 500 K differs from that of layers produced at lower implantation temperatures.