Title of article
High temperature 6H-SiC dinistor
Author/Authors
Andreev، نويسنده , , A.N. and Strelʹchuk، نويسنده , , A.M. and Savkina، نويسنده , , N.S. and Snegov، نويسنده , , F.M. and Chelnokov، نويسنده , , V.E.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1995
Pages
4
From page
194
To page
197
Abstract
6H-SiC dinistors based on epitaxial layers grown by sublimation epitaxy were fabricated. Parameters of these devices were studied at the temperatures 500–800 K.
Keywords
silicon carbide , Semiconductor devices
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
1995
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2130890
Link To Document