Title of article
Growth and characterization of single crystals in the series ZrSxSe2−x
Author/Authors
Bartwal، نويسنده , , K.S. and Srivastava، نويسنده , , O.N.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1995
Pages
7
From page
115
To page
121
Abstract
Single crystals of transition metal dichalcogenide layered compounds with composition ZrSxSe2−x, where x varies within the range 0–2, were grown by the chemical vapour transport technique using iodine as a transporting agent. These binary solid solution crystals are found to be isomorphous over the whole range of composition. The growth conditions and lattice parameters were determined. X-ray diffraction was employed to determine accurate lattice parameters.
Keywords
Layer structure , diffraction , EDAX , Chalisgenides
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
1995
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2131169
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