Title of article
Theoretical investigation of the pressure dependences of energy gaps in InAs and InSb
Author/Authors
Bouarissa، نويسنده , , N. and Aourag، نويسنده , , H.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1995
Pages
11
From page
122
To page
132
Abstract
The observed dependences on pressure of the energy gaps in InAs and InSh at symmetry points in the Brillouin zone are successfully calculated using an empirical method based on the pseudopotential method. The negative pressure derivatives of the gaps at the X points of the conduction band relative to the valence band maxima are due to the d states.
Keywords
Bond structure calculations , Electron states , Semiconductors , Phase transitions
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
1995
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2131171
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